Technical parameters/drain source resistance: | 2.7 Ω |
|
Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 150 mW |
|
Technical parameters/drain source voltage (Vds): | 20 V |
|
Technical parameters/Continuous drain current (Ids): | -400 mA |
|
Technical parameters/rise time: | 9 ns |
|
Technical parameters/descent time: | 11 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 150mW (Ta) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SC-75-3 |
|
Dimensions/Length: | 1.68 mm |
|
Dimensions/Packaging: | SC-75-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2014/06/16 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1013R
|
Vishay Siliconix | 功能相似 | SC-75 |
MOSFET, P, SC-75A; Transistor Polarity: P Channel; Continuous Drain Current Id: 350mA; Drain Source Voltage Vds: 20V;...
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review