Technical parameters/Input capacitance (Ciss): 1400pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 125000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-204
External dimensions/packaging: TO-204
Other/Product Lifecycle: Not Recommended
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Infineon | 功能相似 | SMD-0 |
SMD-0.5P-CH 100V 18A
|
||
IRF9130
|
Intersil | 类似代替 |
INFINEON IRF9130 晶体管, MOSFET, P沟道, 11 A, -100 V, 300 mohm, -10 V, -4 V
|
|||
IRF9140
|
Samsung | 类似代替 |
INFINEON IRF9140 晶体管, MOSFET, P沟道, 19 A, -100 V, 200 mohm, -10 V, -4 V
|
|||
IRF9140
|
Intersil | 类似代替 | TO-3 |
INFINEON IRF9140 晶体管, MOSFET, P沟道, 19 A, -100 V, 200 mohm, -10 V, -4 V
|
||
IRF9140
|
Infineon | 类似代替 | TO-204 |
INFINEON IRF9140 晶体管, MOSFET, P沟道, 19 A, -100 V, 200 mohm, -10 V, -4 V
|
||
IRF9140
|
Semelab | 类似代替 | TO-204 |
INFINEON IRF9140 晶体管, MOSFET, P沟道, 19 A, -100 V, 200 mohm, -10 V, -4 V
|
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