Technical parameters/polarity: | P-CH |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/Continuous drain current (Ids): | 18A |
|
Technical parameters/Input capacitance (Ciss): | 1340pF @25V(Vds) |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 75000 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SMD-0 |
|
Dimensions/Packaging: | SMD-0 |
|
Physical parameters/materials: | Silicon |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9140
|
Samsung | 功能相似 |
-19A , -100V , 0.200欧姆,P沟道功率MOSFET -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET
|
|||
IRF9140
|
Intersil | 功能相似 | TO-3 |
-19A , -100V , 0.200欧姆,P沟道功率MOSFET -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET
|
||
IRF9140
|
Infineon | 功能相似 | TO-204 |
-19A , -100V , 0.200欧姆,P沟道功率MOSFET -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET
|
||
IRF9140
|
Semelab | 功能相似 | TO-204 |
-19A , -100V , 0.200欧姆,P沟道功率MOSFET -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET
|
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