Technical parameters/number of pins: 3
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 100
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Industrial, Automotive, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMUN2114LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMUN2114LT1G 晶体管 双极预偏置/数字, BRT, -50 V, -100 mA, 10 kohm, 47 kohm, 4.7 电阻比率, SOT-23
|
||
PDTA114YT,215
|
NXP | 功能相似 | SOT-23-3 |
NXP PDTA114YT,215 晶体管 双极预偏置/数字, BRT, -50 V, -100 mA, 10 kohm, 47 kohm, 4.7 电阻比率, SOT-23
|
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