Technical parameters/frequency: 4 MHz
Technical parameters/rated voltage (DC): 250 V
Technical parameters/rated current: 16.0 A
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 200 W
Technical parameters/gain bandwidth product: 4 MHz
Technical parameters/breakdown voltage (collector emitter): 250 V
Technical parameters/maximum allowable collector current: 16A
Technical parameters/minimum current amplification factor (hFE): 20 @8A, 5V
Technical parameters/Maximum current amplification factor (hFE): 80
Technical parameters/rated power (Max): 200 W
Technical parameters/DC current gain (hFE): 20
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 200000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 16.26 mm
External dimensions/width: 5.3 mm
External dimensions/height: 21.08 mm
External dimensions/packaging: TO-247-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, Audio, Audio, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2016/06/20
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJW21196
|
ON Semiconductor | 完全替代 | TO-247-3 |
硅功率晶体管 Silicon Power Transistors
|
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