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Model MJW21196
Description 硅功率晶体管 Silicon Power Transistors
Product QR code
Brand: ON Semiconductor
Packaging TO-247-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1879) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

250 V

 

Technical parameters/rated current:

16.0 A

 

Technical parameters/polarity:

NPN

 

Technical parameters/dissipated power:

200 W

 

Technical parameters/breakdown voltage (collector emitter):

250 V

 

Technical parameters/Maximum allowable collector current:

16A

 

Technical parameters/minimum current amplification factor (hFE):

20 @8A, 5V

 

Technical parameters/rated power (Max):

200 W

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Encapsulation parameters/installation method:

Through Hole

 

Encapsulation parameters/Encapsulation:

TO-247-3

 

Dimensions/Length:

16.26 mm

 

Dimensions/Width:

5.3 mm

 

Dimensions/Height:

21.08 mm

 

Dimensions/Packaging:

TO-247-3

 

Physical parameters/operating temperature:

-65℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MJW21196G MJW21196G ON Semiconductor 完全替代 TO-247-3
ON SEMICONDUCTOR MJW21196G 单晶体管 双极, 通用, NPN, 250 V, 200 W, 16 A, 20 hFE
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