Technical parameters/rated power: 144 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.078 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 144 W
Technical parameters/threshold voltage: 5 V
Technical parameters/input capacitance: 1710 pF
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/Continuous drain current (Ids): 24A
Technical parameters/rise time: 22.4 ns
Technical parameters/Input capacitance (Ciss): 1710pF @50V(Vds)
Technical parameters/rated power (Max): 144 W
Technical parameters/descent time: 14.8 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 144W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Battery Operated Drive, Power Management, Power management, Lighting LED
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR13N20DPBF
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Infineon | 类似代替 | TO-252-3 |
INFINEON IRFR13N20DPBF 晶体管, MOSFET, N沟道, 13 A, 200 V, 235 mohm, 10 V, 5.5 V
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IRFR220NPBF
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Infineon | 类似代替 | TO-252-3 |
INFINEON IRFR220NPBF 晶体管, MOSFET, N沟道, 5 A, 200 V, 600 mohm, 10 V, 4 V
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IRFR220NPBF
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Kersemi Electronic | 类似代替 |
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IRFR9N20DPBF
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International Rectifier | 类似代替 | TO-252-3 |
N 通道功率 MOSFET 8A 至 12A，Infineon Infineon 系列分离式 HEXFET® 功率 MOSFET 包括 N 通道设备，采用表面安装和引线封装。 形状系数可解决大多数板布局和热设计挑战问题。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) ### MOSFET 晶体管，Infineon Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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