Technical parameters/rated voltage (DC): 24.0 V
Technical parameters/rated current: 85.0 A
Technical parameters/drain source resistance: 4.80 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.25W (Ta), 78.1W (Tc)
Technical parameters/input capacitance: 2.05 nF
Technical parameters/gate charge: 17.7 nC
Technical parameters/drain source voltage (Vds): 24 V
Technical parameters/leakage source breakdown voltage: 24.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 85.0 A
Technical parameters/Input capacitance (Ciss): 2050pF @20V(Vds)
Technical parameters/rated power (Max): 1.25 W
Technical parameters/dissipated power (Max): 1.25W (Ta), 78.1W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTD110N02RT4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
24V,110A功率MOSFET
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STD95N2LH5
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ST Microelectronics | 功能相似 | TO-252-3 |
N 通道 STripFET™ V，STMicroelectronics STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管，STMicroelectronics
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