Technical parameters/rated voltage (DC): 24.0 V
Technical parameters/rated current: 110 A
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0041 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 110 W
Technical parameters/threshold voltage: 1.5 V
Technical parameters/input capacitance: 3.44 nF
Technical parameters/gate charge: 28.0 nC
Technical parameters/drain source voltage (Vds): 24 V
Technical parameters/leakage source breakdown voltage: 24 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 110 A
Technical parameters/rise time: 39 ns
Technical parameters/Input capacitance (Ciss): 3440pF @20V(Vds)
Technical parameters/rated power (Max): 1.5 W
Technical parameters/descent time: 21 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 1.5W (Ta), 110W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.38 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTD85N02R-1G
|
ON Semiconductor | 类似代替 | TO-251-3 |
85A,24V功率MOSFET
|
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