Technical parameters/drain source resistance: 500 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 500 mW
Technical parameters/drain source voltage (Vds): 10.6 V
Technical parameters/leakage source breakdown voltage: 10.0 V
Technical parameters/breakdown voltage of gate source: 10.6 V
Technical parameters/Continuous drain current (Ids): 12.0 mA
Technical parameters/Input capacitance (Ciss): 2.5pF @5V(Vds)
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DIP-16
External dimensions/packaging: DIP-16
Physical parameters/operating temperature: 0℃ ~ 70℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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