Technical parameters/power supply current: 7.8 mA
Technical parameters/number of circuits: 1
Technical parameters/dissipated power: 740 mW
Technical parameters/gain bandwidth product: 290 MHz
Technical parameters/input compensation voltage: 1 mV
Technical parameters/input bias current: 2 µA
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/3dB bandwidth: 290 MHz
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.91 mm
External dimensions/height: 1.58 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
THS4011CDR
|
TI | 完全替代 | SOIC-8 |
290 - MHz的低失真高速放大器 290-MHz LOW-DISTORTION HIGH-SPEED AMPLIFIERS
|
||
THS4011IDR
|
TI | 完全替代 | SOIC-8 |
高速运算放大器 HIGH SPEED, LOW NOISE, OP AMP
|
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