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Technical parameters/power supply current: 7.8 mA
Technical parameters/number of circuits: 1
Technical parameters/number of channels: 1
Technical parameters/dissipated power: 740 mW
Technical parameters/common mode rejection ratio: 90 dB
Technical parameters/Input compensation drift: 15.0 µV/K
Technical parameters/bandwidth: 290 MHz
Technical parameters/conversion rate: 310 V/μs
Technical parameters/gain bandwidth product: 290 MHz
Technical parameters/input compensation voltage: 1 mV
Technical parameters/input bias current: 2 µA
Technical parameters/available channels: S, D
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/3dB bandwidth: 290 MHz
Technical parameters/gain bandwidth: 290 MHz
Technical parameters/dissipated power (Max): 740 mW
Technical parameters/Common Mode Rejection Ratio (Min): 90 dB
Technical parameters/power supply voltage (Max): 33 V
Technical parameters/power supply voltage (Min): 9 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.91 mm
External dimensions/height: 1.58 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: 0℃ ~ 70℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
THS4011IDR
|
TI | 完全替代 | SOIC-8 |
高速运算放大器 HIGH SPEED, LOW NOISE, OP AMP
|
||
THS4011IDRG4
|
TI | 完全替代 | SOIC-8 |
Op Amp Single Volt Fdbk ±16.5V/33V 8Pin SOIC T/R
|
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