Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.037 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 500 mW
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/Continuous drain current (Ids): 2.9A
Technical parameters/rise time: 122 ns
Technical parameters/Input capacitance (Ciss): 224pF @6V(Vds)
Technical parameters/descent time: 290 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SMD-3
External dimensions/length: 0.64 mm
External dimensions/width: 1.04 mm
External dimensions/height: 0.35 mm
External dimensions/packaging: SMD-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power management, portable equipment, industrial, consumer electronics products
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD13383F4
|
TI | 功能相似 | PICOSTAR-3 |
CSD13383F4 12V N 通道 FemtoFET™ MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review