Technical parameters/rated power: 300 mW
Technical parameters/breakdown voltage: 40.0 V|40 V
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 300 mW
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBFJ201
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBFJ201 晶体管, JFET, JFET, -40 V, 200 µA, 1 mA, -1.5 V, SOT-23, JFET
|
||
MMBFJ202
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBFJ202. 晶体管, JFET, 40V, 3-SOT-23
|
||
MMBFJ202
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBFJ202. 晶体管, JFET, 40V, 3-SOT-23
|
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