Technical parameters/polarity: NPN
Technical parameters/dissipated power: 2 W
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 8A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.28 mm
External dimensions/width: 4.82 mm
External dimensions/height: 9.28 mm
External dimensions/packaging: TO-220-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJE5740
|
ON Semiconductor | 功能相似 | TO-220 |
NPN硅功率达林顿晶体管8安培300-400 VOLTS 80瓦 NPN Silicon Power Darlington Transistors 8 AMPERES 300−400 VOLTS 80 WATTS
|
||
MJE5742
|
ON Semiconductor | 类似代替 | TO-220-3 |
NPN硅功率达林顿晶体管8安培300-400 VOLTS 80瓦 NPN Silicon Power Darlington Transistors 8 AMPERES 300−400 VOLTS 80 WATTS
|
||
MJE5742
|
Motorola | 类似代替 |
NPN硅功率达林顿晶体管8安培300-400 VOLTS 80瓦 NPN Silicon Power Darlington Transistors 8 AMPERES 300−400 VOLTS 80 WATTS
|
|||
|
|
New Jersey Semiconductor | 类似代替 |
NPN硅功率达林顿晶体管8安培300-400 VOLTS 80瓦 NPN Silicon Power Darlington Transistors 8 AMPERES 300−400 VOLTS 80 WATTS
|
|||
MJE5742G
|
ON Semiconductor | 类似代替 | TO-220-3 |
ON SEMICONDUCTOR MJE5742G 单晶体管 双极, 达林顿, NPN, 400 V, 80 W, 8 A, 400 hFE
|
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