Technical parameters/rated voltage (DC): 400 V
Technical parameters/rated current: 8.00 A
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/maximum allowable collector current: 8A
Technical parameters/minimum current amplification factor (hFE): 200 @2A, 5V
Technical parameters/rated power (Max): 2 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Other/Minimum Packaging: 50
Other/Manufacturing Applications: Switching Regulators, Motor Controls, Small Engine Ignition, Inverters, Solenoid and Relay Drivers
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJE5740
|
ON Semiconductor | 功能相似 | TO-220 |
POWER DARLINGTON TRANSISTORS 8 AMPERES 300- 350- 400 VOLTS 80W
|
||
MJE5740G
|
ON Semiconductor | 类似代替 | TO-220-3 |
NPN硅功率达林顿晶体管8安培300-400 VOLTS 80瓦 NPN Silicon Power Darlington Transistors 8 AMPERES 300−400 VOLTS 80 WATTS
|
||
MJE5742
|
ON Semiconductor | 功能相似 | TO-220-3 |
TRANS NPN DARL 400V 8A TO220AB
|
||
MJE5742
|
Motorola | 功能相似 |
TRANS NPN DARL 400V 8A TO220AB
|
|||
|
|
New Jersey Semiconductor | 功能相似 |
TRANS NPN DARL 400V 8A TO220AB
|
|||
MJE5742G
|
ON Semiconductor | 完全替代 | TO-220-3 |
ON SEMICONDUCTOR MJE5742G 单晶体管 双极, 达林顿, NPN, 400 V, 80 W, 8 A, 400 hFE
|
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