Technical parameters/frequency: 1 MHz
Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 15.0 A
Technical parameters/rated power: 115 W
Technical parameters/number of pins: 2
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 115 W
Technical parameters/collector breakdown voltage: 100 V
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 20 @4A, 4V
Technical parameters/Maximum current amplification factor (hFE): 70
Technical parameters/rated power (Max): 115 W
Technical parameters/DC current gain (hFE): 70
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 115000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-3
External dimensions/length: 39.5 mm
External dimensions/width: 26.2 mm
External dimensions/height: 8.7 mm
External dimensions/packaging: TO-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tray
Other/Manufacturing Applications: Portable Devices, Consumer Electronics, Industrial, Portable Equipment, Industrial, Power Management, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/06/16
Customs information/ECCN code: EAR99
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