Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 1A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFL9110TRPBF
|
Vishay Semiconductor | 功能相似 | SOT-223 |
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223 T/R
|
||
IRFL9110TRPBF
|
VISHAY | 功能相似 | TO-261-4 |
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223 T/R
|
||
MMFT1N10ET1
|
ON Semiconductor | 完全替代 | SOT-223 |
中等功率场效应晶体管N沟道增强模式硅栅TMOS E-FET?SOT-223表面贴装这种先进的E-FET是一个TMOS中等功率MOSFET设计能够承受高能量的雪崩和减刑模式。这种新型高效节能设备,还提供了一个漏 - 源二..
|
||
STN1NF10
|
ST Microelectronics | 功能相似 | TO-261-4 |
STMICROELECTRONICS STN1NF10 晶体管, MOSFET, N沟道, 500 mA, 100 V, 700 mohm, 10 V, 3 V
|
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