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Model MMFT1N10ET1
Description Medium power field-effect transistor N-channel enhancement mode silicon gate TMOS E-FET? SOT-223 surface mount, an advanced E-FET, is a TMOS medium power MOSFET designed to withstand high-energy avalanche and commutation modes. This new type of high-efficiency energy-saving equipment also provides a leakage source two
Product QR code
Brand: ON Semiconductor
Packaging SOT-223
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.72  yuan 0.72yuan
10+:
$ 0.9707
50+:
$ 0.9203
100+:
$ 0.8844
300+:
$ 0.8628
500+:
$ 0.8412
1000+:
$ 0.8197
2500+:
$ 0.7873
5000+:
$ 0.7801
Quantity
10+
50+
100+
300+
500+
Price
$0.9707
$0.9203
$0.8844
$0.8628
$0.8412
Price $ 0.9707 $ 0.9203 $ 0.8844 $ 0.8628 $ 0.8412
Start batch production 10+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9034) Minimum order quantity(10)
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Technical parameters/rise time: 15 ns

Technical parameters/Input capacitance (Ciss): 410pF @20V(Vds)

Technical parameters/descent time: 32 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 800 mW

Package parameters/number of pins: 4

Encapsulation parameters/Encapsulation: SOT-223

External dimensions/packaging: SOT-223

Physical parameters/materials: Silicon

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MMFT1N10ET3 MMFT1N10ET3 ON Semiconductor 完全替代 SOT-223
SOT-223 N-CH 100V 1A
STN1NF10 STN1NF10 ST Microelectronics 功能相似 TO-261-4
STMICROELECTRONICS STN1NF10 晶体管, MOSFET, N沟道, 500 mA, 100 V, 700 mohm, 10 V, 3 V
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