Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 75.0 A
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 140W (Tc)
Technical parameters/product series: IRF1010EZ
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0V (min)
Technical parameters/Continuous drain current (Ids): 75.0 A
Technical parameters/rise time: 90 ns
Technical parameters/Input capacitance (Ciss): 2810pF @25V(Vds)
Technical parameters/descent time: 54 ns
Technical parameters/dissipated power (Max): 140W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF1010EZPBF
|
IRF | 类似代替 |
INFINEON IRF1010EZPBF 晶体管, MOSFET, N沟道, 84 A, 60 V, 8.5 mohm, 10 V, 4 V
|
|||
IRF1010EZPBF
|
International Rectifier | 类似代替 | TO-220-3 |
INFINEON IRF1010EZPBF 晶体管, MOSFET, N沟道, 84 A, 60 V, 8.5 mohm, 10 V, 4 V
|
||
STD1NB80
|
ST Microelectronics | 功能相似 | DPAK |
N - CHANNEL 800V - 16ohm - 1A - DPAK / IPAK的PowerMESH MOSFET N - CHANNEL 800V - 16ohm - 1A - DPAK/IPAK PowerMESH MOSFET
|
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