Technical parameters/number of channels: 1
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 300 W
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/Continuous drain current (Ids): 11.4A
Technical parameters/rise time: 135 ns
Technical parameters/Input capacitance (Ciss): 3500pF @25V(Vds)
Technical parameters/descent time: 90 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/packaging: TO-3-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Freescale | 功能相似 |
MOSFET N-CH 900V 11.4A TO-3P
|
|||
FQA11N90
|
ON Semiconductor | 功能相似 | TO-3-3 |
MOSFET N-CH 900V 11.4A TO-3P
|
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