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Model FQA11N90
Description MOSFET N-CH 900V 11.4A TO-3P
Product QR code
Brand: ON Semiconductor
Packaging TO-3-3
Delivery time
Packaging method Rail
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7595) Minimum order quantity(1)
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Technical parameters/dissipated power:

300W (Tc)

 

Technical parameters/drain source voltage (Vds):

900 V

 

Technical parameters/rise time:

135 ns

 

Technical parameters/Input capacitance (Ciss):

3500pF @25V(Vds)

 

Technical parameters/descent time:

90 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

300W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-3-3

 

Dimensions/Packaging:

TO-3-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Obsolete

 

Other/Packaging Methods:

Rail

 

Compliant with standards/RoHS standards:

 

Compliant with standards/lead standards:

lead-free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FQA11N90_F109 FQA11N90_F109 Fairchild 功能相似 TO-3-3
N-Channel QFET® MOSFET 900V, 11.4A, 960mΩ
PDF
FQA11N90_F109 FQA11N90_F109 ON Semiconductor 功能相似 TO-3
N-Channel QFET® MOSFET 900V, 11.4A, 960mΩ

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