Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 4.70 A
Technical parameters/number of channels: 2
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.034 Ω
Technical parameters/polarity: Dual N-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/threshold voltage: 2.3 V
Technical parameters/input capacitance: 1.18 nF
Technical parameters/gate charge: 25.0 nC
Technical parameters/drain source voltage (Vds): 80 V
Technical parameters/leakage source breakdown voltage: 80 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 4.70 A
Technical parameters/rise time: 8 ns
Technical parameters/Input capacitance (Ciss): 1180pF @40V(Vds)
Technical parameters/rated power (Max): 900 mW
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.6 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.575 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Rochester | 功能相似 | SOT |
FAIRCHILD SEMICONDUCTOR FDS3890 双路场效应管, MOSFET, 双N沟道, 4.7 A, 80 V, 0.034 ohm, 10 V, 2.3 V
|
||
FDS3890
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS3890 双路场效应管, MOSFET, 双N沟道, 4.7 A, 80 V, 0.034 ohm, 10 V, 2.3 V
|
||
FDS3890
|
ON Semiconductor | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS3890 双路场效应管, MOSFET, 双N沟道, 4.7 A, 80 V, 0.034 ohm, 10 V, 2.3 V
|
||
|
|
Fairchild | 功能相似 | SOIC |
SOIC N-CH 80V 4.7A
|
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