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Technical parameters/polarity: | N-CH |
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Technical parameters/drain source voltage (Vds): | 80 V |
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Technical parameters/Continuous drain current (Ids): | 4.7A |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOIC |
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Dimensions/Packaging: | SOIC |
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Other/Product Lifecycle: | Obsolete |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Rochester | 功能相似 | SOT |
FAIRCHILD SEMICONDUCTOR FDS3890 双路场效应管, MOSFET, 双N沟道, 4.7 A, 80 V, 0.034 ohm, 10 V, 2.3 V
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FDS3890
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Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS3890 双路场效应管, MOSFET, 双N沟道, 4.7 A, 80 V, 0.034 ohm, 10 V, 2.3 V
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FDS3890
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ON Semiconductor | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS3890 双路场效应管, MOSFET, 双N沟道, 4.7 A, 80 V, 0.034 ohm, 10 V, 2.3 V
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