Technical parameters/rated voltage (DC): 140 V
Technical parameters/rated current: 20.0 A
Technical parameters/breakdown voltage (collector emitter): 140 V
Technical parameters/minimum current amplification factor (hFE): 25 @5A, 2V
Technical parameters/rated power (Max): 250 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJ15003
|
ON Semiconductor | 类似代替 | TO-3 |
NTE ELECTRONICS MJ15003 Bipolar (BJT) Single Transistor, NPN, 140V, 2MHz, 250W, 20A, 25 hFE
|
||
MJ15003
|
ON Semiconductor | 类似代替 | TO-3 |
NTE ELECTRONICS MJ15003 Bipolar (BJT) Single Transistor, NPN, 140V, 2MHz, 250W, 20A, 25 hFE
|
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