Technical parameters/rated voltage (DC): | 140 V |
|
Technical parameters/rated current: | 20.0 A |
|
Technical parameters/breakdown voltage (collector emitter): | 140 V |
|
Technical parameters/minimum current amplification factor (hFE): | 25 @5A, 2V |
|
Technical parameters/rated power (Max): | 250 W |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-3 |
|
Dimensions/Packaging: | TO-3 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tray |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJ15003
|
ON Semiconductor | 类似代替 | TO-3 |
NTE ELECTRONICS MJ15003 Bipolar (BJT) Single Transistor, NPN, 140V, 2MHz, 250W, 20A, 25 hFE
|
||
MJ15003
|
ON Semiconductor | 类似代替 | TO-3 |
NTE ELECTRONICS MJ15003 Bipolar (BJT) Single Transistor, NPN, 140V, 2MHz, 250W, 20A, 25 hFE
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review