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Model 1.5KE27AG

Description 1500W Mosorb™ The Zener transient voltage suppressor (unidirectional) Mosorb device is designed to protect voltage sensitive components against high voltage and high-energy transients. They have excellent clamping ability, high surge capability, low Zener impedance, and fast response time. Peak power: 1500W @ 1 ms Class 3 ESD level>(16kV)/human body model maximum clamp voltage @ peak pulse current low leakage UL 497B, used for isolation circuit protection response time is usually # # # transient voltage suppressor, On Semiconductor

Brand: ON Semiconductor

Packaging DO-201AD

Delivery time

Packaging method Each

Standard packaging quantity 1

5+:

$ 1.6119

25+:

$ 1.4925

50+:

$ 1.4089

100+:

$ 1.3731

500+:

$ 1.3492

2500+:

$ 1.3194

5000+:

$ 1.3074

10000+:

$ 1.2895

Price	$ 1.6119	$ 1.4925	$ 1.4089	$ 1.3731	$ 1.3492
Start batch production	5+	25+	50+	100+	500+

Freight charges： In stock Freight rate：$13.00

Quantity：

Inventory(7296) Minimum order quantity(5)

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Technical parameters/rated voltage (DC): 27.0 V

Technical parameters/rated power: 1.50 kW

Technical parameters/halogen-free state: Halogen Free

Technical parameters/breakdown voltage: 25.7 V|25.7 V

Technical parameters/number of circuits: 1

Technical parameters/forward voltage: 3.50 V

Technical parameters/dissipated power: 1500 W

Technical parameters/clamp voltage: 37.5 V

Technical parameters/Maximum reverse voltage (Vrrm): 23.1V

Technical parameters/test current: 1 mA

Technical parameters/maximum reverse breakdown voltage: 28.4 V

Technical parameters/peak pulse power: 1500 W

Technical parameters/minimum reverse breakdown voltage: 25.7 V

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/operating temperature: -65℃ ~ 175℃

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 2

Encapsulation parameters/Encapsulation: DO-201AD

External dimensions/length: 9.5 mm

External dimensions/diameter: 5.30 mm

External dimensions/packaging: DO-201AD

Physical parameters/operating temperature: -65℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Each

Other/Manufacturing Applications: General

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2015/12/17

Customs information/ECCN code: EAR99

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1N6281AG	ON Semiconductor	完全替代	DO-201AD	1500W Mosorb™ 齐纳瞬态电压抑制器（单向） Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。峰值功率：1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型最高钳位电压 @ 峰值脉冲电流低泄漏 UL 497B，用于隔离回路保护响应时间通常为 ### 瞬态电压抑制器，On Semiconductor	PDF
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