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Model 1N6281AG
Description 1500W Mosorb™ 齐纳瞬态电压抑制器（单向） Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率：1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 UL 497B，用于隔离回路保护 响应时间通常为 ### 瞬态电压抑制器，On Semiconductor
Product QR code
Brand: ON Semiconductor
Packaging DO-201AD
Delivery time
Packaging method Bulk
Standard packaging quantity 1
2.47  yuan 2.47yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5933) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

27.0 V

 

Technical parameters/rated current:

40.0 A

 

Technical parameters/rated power:

1.50 kW

 

Technical parameters/halogen-free state:

Halogen Free

 

Technical parameters/breakdown voltage:

25.7 V|25.7 V

 

Technical parameters/number of circuits:

1

 

Technical parameters/number of pins:

2

 

Technical parameters/dissipated power:

1500 W

 

Technical parameters/clamp voltage:

37.5 V

 

Technical parameters/Maximum reverse voltage (Vrrm):

23.1V

 

Technical parameters/test current:

1 mA

 

Technical parameters/maximum reverse breakdown voltage:

28.4 V

 

Technical parameters/peak pulse power:

1500 W

 

Technical parameters/minimum reverse breakdown voltage:

25.7 V

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/operating temperature:

-65℃ ~ 175℃

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

2

 

Encapsulation parameters/Encapsulation:

DO-201AD

 

Dimensions/Length:

9.5 mm

 

Dimensions/Diameter:

5.30 mm

 

Dimensions/Packaging:

DO-201AD

 

Physical parameters/operating temperature:

-65℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Bulk

 

Other/Manufacturing Applications:

General, Medical, Power Management, Consumer Electronics, Industrial, Automation& Process Control, Communications & Networking, Computers & Computer Peripherals

 

Compliant with standards/RoHS standards:
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1.5KE27A 1.5KE27A Micro Commercial Components 功能相似 DO-201AE
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1.5KE27A 1.5KE27A HY Electronic 功能相似 DO-201
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1.5KE27A 1.5KE27A EIC 功能相似 DO-201
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1.5KE27A 1.5KE27A JXND 功能相似 DO-201
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1.5KE27A 1.5KE27A Littelfuse 功能相似 DO-201
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1.5KE27A 1.5KE27A Taiwan Semiconductor 功能相似 DO-201
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1.5KE27A 1.5KE27A ON Semiconductor 功能相似 DO-201AD-2
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1.5KE27A 1.5KE27A ST Microelectronics 功能相似 DO-201
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1.5KE27A 1.5KE27A Multicomp 功能相似 DO-201
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1.5KE27AG 1.5KE27AG Littelfuse 完全替代 DO-201AD
1500W Mosorb™ 齐纳瞬态电压抑制器（单向） Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率：1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 UL 497B，用于隔离回路保护 响应时间通常为 ### 瞬态电压抑制器，On Semiconductor
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1.5KE27AG 1.5KE27AG ON Semiconductor 完全替代 DO-201AD
1500W Mosorb™ 齐纳瞬态电压抑制器（单向） Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率：1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 UL 497B，用于隔离回路保护 响应时间通常为 ### 瞬态电压抑制器，On Semiconductor
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1.5KE27AG 1.5KE27AG Z-TEK 完全替代
1500W Mosorb™ 齐纳瞬态电压抑制器（单向） Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率：1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 UL 497B，用于隔离回路保护 响应时间通常为 ### 瞬态电压抑制器，On Semiconductor
1N6281A 1N6281A Comchip Technology 类似代替
1500瓦Mosorb TM齐纳瞬态电压抑制器 1500 Watt Mosorb TM Zener Transient Voltage Suppressors
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1N6281A 1N6281A Good-Ark Electronics 类似代替 DO-201AE
1500瓦Mosorb TM齐纳瞬态电压抑制器 1500 Watt Mosorb TM Zener Transient Voltage Suppressors
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1N6281A 1N6281A ON Semiconductor 类似代替 DO-201AD
1500瓦Mosorb TM齐纳瞬态电压抑制器 1500 Watt Mosorb TM Zener Transient Voltage Suppressors
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1N6281A 1N6281A Microsemi 类似代替 CASE-1
1500瓦Mosorb TM齐纳瞬态电压抑制器 1500 Watt Mosorb TM Zener Transient Voltage Suppressors
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1N6281A 1N6281A ETC 类似代替
1500瓦Mosorb TM齐纳瞬态电压抑制器 1500 Watt Mosorb TM Zener Transient Voltage Suppressors
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