Technical parameters/rise time: 2.7 ns
Technical parameters/Input capacitance (Ciss): 51pF @25V(Vds)
Technical parameters/descent time: 27 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 360 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Manufacturing Applications: Automotive, Onboard charger
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Siemens Semiconductor | 功能相似 | SOT-23 |
Infineon SIPMOS® N 通道 MOSFET ### MOSFET 晶体管,Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
|
||
BSS169
|
Infineon | 功能相似 | SOT-23 |
Infineon SIPMOS® N 通道 MOSFET ### MOSFET 晶体管,Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
|
||
BSS169H6327
|
Infineon | 功能相似 | SOT-23-3 |
100V,0.09A,N沟道功率MOSFET
|
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