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Model BSS169H6327
Description 100V,0.09A,N沟道功率MOSFET
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Brand: Infineon
Packaging SOT-23-3
Delivery time
Packaging method
Standard packaging quantity 1
0.48  yuan 0.48yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3675) Minimum order quantity(1)
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Encapsulation parameters/Encapsulation:

SOT-23-3

 

Dimensions/Packaging:

SOT-23-3

 

Other/source drain avalanche voltage VBR (V):

100

 

Other/source drain maximum on resistance rDS (on) (m Ω):

12000

 

Other/maximum drain current Id (on) (A):

0.09

 

Other/channel polarity:

Nchannel

 

Other/Packaging/Temperature (℃):

SOT-23-3/-55~150

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSS169 BSS169 Siemens Semiconductor 功能相似 SOT-23
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
PDF
BSS169 BSS169 Infineon 功能相似 SOT-23
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
PDF

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