Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 2.80 A
Technical parameters/drain source resistance: 180 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.7 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 3.00 A
Technical parameters/rise time: 2.3 ns
Technical parameters/Input capacitance (Ciss): 190pF @25V(Vds)
Technical parameters/rated power (Max): 1.1 W
Technical parameters/descent time: 2.9 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.1W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-23-6
External dimensions/length: 3.1 mm
External dimensions/width: 1.8 mm
External dimensions/height: 1.3 mm
External dimensions/packaging: SOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ZXM62N03E6TA
|
Vishay Semiconductor | 功能相似 | SOT-23-6 |
MOSFET N-CH 30V 3.2A SOT-23-6
|
||
ZXM62N03E6TA
|
Diodes Zetex | 功能相似 | SOT-23-6 |
MOSFET N-CH 30V 3.2A SOT-23-6
|
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ZXM62N03E6TA
|
Diodes | 功能相似 | SOT-23 |
MOSFET N-CH 30V 3.2A SOT-23-6
|
||
ZXM62N03E6TA
|
Zetex | 功能相似 |
MOSFET N-CH 30V 3.2A SOT-23-6
|
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