Technical parameters/rated voltage (DC): | 30.0 V |
|
Technical parameters/rated current: | 3.20 A |
|
Technical parameters/drain source resistance: | 150 mΩ |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 1.1W (Ta) |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/Leakage source breakdown voltage: | 30.0 V |
|
Technical parameters/breakdown voltage of gate source: | ±20.0 V |
|
Technical parameters/Continuous drain current (Ids): | 3.20 A |
|
Technical parameters/rise time: | 10.4 ns |
|
Technical parameters/Input capacitance (Ciss): | 380pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 1.1 W |
|
Technical parameters/dissipated power (Max): | 1.1W (Ta) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SOT-23-6 |
|
Dimensions/Packaging: | SOT-23-6 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ZXM62N03E6
|
Diodes | 功能相似 | SOT-23 |
30V N-channel Enhancementmodemosfet
|
||
ZXMN3A01E6TA
|
Diodes Zetex | 功能相似 | SOT-23-6 |
N沟道 30V 2.4A
|
||
|
|
Zetex | 功能相似 | SOT-23-6 |
N沟道 30V 2.4A
|
||
ZXMN3A01E6TA
|
Diodes | 功能相似 | SOT-23-6 |
N沟道 30V 2.4A
|
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