Technical parameters/frequency: 4 MHz
Technical parameters/rated voltage (DC): 250 V
Technical parameters/rated current: 16.0 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 250 W
Technical parameters/breakdown voltage (collector emitter): 250 V
Technical parameters/maximum allowable collector current: 16A
Technical parameters/minimum current amplification factor (hFE): 25 @8A, 5V
Technical parameters/Maximum current amplification factor (hFE): 75
Technical parameters/rated power (Max): 250 W
Technical parameters/DC current gain (hFE): 25
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-204-2
External dimensions/width: 26.67 mm
External dimensions/packaging: TO-204-2
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJ21194
|
ON Semiconductor | 类似代替 | TO-204-2 |
互补硅功率晶体管 COMPLEMENTARY SILICON POWER TRANSISTORS
|
||
MJ21194G
|
ON Semiconductor | 类似代替 | TO-204-2 |
ON SEMICONDUCTOR MJ21194G 单晶体管 双极, 音频, NPN, 250 V, 4 MHz, 250 W, 16 A, 75 hFE
|
||
MJ21196
|
ON Semiconductor | 类似代替 | TO-204-2 |
硅功率晶体管 Silicon Power Transistors
|
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