MJ21194G In Stock|PDF|Datasheet|Price|Agent[MJ21194G Alternative|Silk Screen|Technology|Solution Development]-ICGOODFIND

Alternative material

Technical parameters/frequency:	4 MHz
Technical parameters/rated voltage (DC):	250 V
Technical parameters/rated current:	16.0 A
Technical parameters/number of pins:	2
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	250 W
Technical parameters/breakdown voltage (collector emitter):	250 V
Technical parameters/thermal resistance:	0.7℃/W (RθJC)
Technical parameters/Maximum allowable collector current:	16A
Technical parameters/minimum current amplification factor (hFE):	25
Technical parameters/maximum current amplification factor (hFE):	75
Technical parameters/rated power (Max):	250 W
Technical parameters/DC current gain (hFE):	75
Technical parameters/operating temperature (Max):	200 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	250000 mW
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	2
Encapsulation parameters/Encapsulation:	TO-204-2
Dimensions/Length:	39.37 mm
Dimensions/Width:	26.67 mm
Dimensions/Height:	8.51 mm
Dimensions/Packaging:	TO-204-2
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	-65℃ ~ 200℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tray
Other/Manufacturing Applications:	Audio, Industrial, Audio, Industrial
Compliant with standards/RoHS standards:	RoHS Compliant

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
MJ21194	ON Semiconductor	类似代替	TO-204-2	互补硅功率晶体管 COMPLEMENTARY SILICON POWER TRANSISTORS	PDF
MJ21196	ON Semiconductor	类似代替	TO-204-2	硅功率晶体管 Silicon Power Transistors	PDF
MJ21196G	ON Semiconductor	类似代替	TO-204-2	硅功率晶体管 Silicon Power Transistors	PDF

ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643