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Model SI9926BDY
Description MOSFET, DUAL, NN, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.2A; Drain Source Voltage Vds: ...
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Brand: Vishay Siliconix
Packaging SO-8
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1989) Minimum order quantity(1)
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Technical parameters/drain source resistance: 20.0 mΩ

Technical parameters/polarity: N-Channel, Dual N-Channel

Technical parameters/dissipated power: 1.14 W

Technical parameters/leakage source breakdown voltage: 20.0 V

Technical parameters/breakdown voltage of gate source: ±12.0 V

Technical parameters/Continuous drain current (Ids): 6.20 A

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO-8

External dimensions/length: 4.9 mm

External dimensions/width: 3.9 mm

External dimensions/height: 1.75 mm

External dimensions/packaging: SO-8

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: Non-Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI9926BDY-E3 SI9926BDY-E3 Vishay Siliconix 类似代替 SO-8
MOSFET NCh Dual MOSFET 2.5V
PDF
SI9926BDY-T1-GE3 SI9926BDY-T1-GE3 VISHAY 功能相似 SOIC
MOSFET 20V 8.2A 2W 20mohm @ 4.5V
SI9926BDY-T1-GE3 SI9926BDY-T1-GE3 Vishay Semiconductor 功能相似 SOIC
MOSFET 20V 8.2A 2W 20mohm @ 4.5V
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