Technical parameters/drain source resistance: 0.02 Ω
Technical parameters/polarity: Dual N-Channel
Technical parameters/dissipated power: 1.14 W
Technical parameters/threshold voltage: 600 mV
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 6.20 A
Technical parameters/rise time: 50 ns
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 150 ℃
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
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