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Description ThinQ! TM SiC Schottky diode thinQ! TM SiC Schottky Diode
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Brand: Infineon
Packaging TO-220-2
Delivery time
Packaging method Each
Standard packaging quantity 1
304.97  yuan 304.97yuan
1+:
$ 350.7167
10+:
$ 341.5675
50+:
$ 334.5532
100+:
$ 332.1134
200+:
$ 330.2836
500+:
$ 327.8438
1000+:
$ 326.3190
2000+:
$ 324.7941
Quantity
1+
10+
50+
100+
200+
Price
$350.7167
$341.5675
$334.5532
$332.1134
$330.2836
Price $ 350.7167 $ 341.5675 $ 334.5532 $ 332.1134 $ 330.2836
Start batch production 1+ 10+ 50+ 100+ 200+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(7914) Minimum order quantity(1)
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Technical parameters/forward voltage: 1.8V @5A

Technical parameters/thermal resistance: 2℃/W (RθJC)

Technical parameters/reverse recovery time: 0 ns

Technical parameters/forward current: 5 A

Technical parameters/Maximum forward surge current (Ifsm): 29 A

Technical parameters/forward current (Max): 5 A

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/working junction temperature (Max): 175 ℃

Technical parameters/dissipated power (Max): 75000 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 2

Encapsulation parameters/Encapsulation: TO-220-2

External dimensions/packaging: TO-220-2

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Each

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IDH10S120 IDH10S120 Infineon 类似代替 TO-220-2
INFINEON IDH10S120 二极管, 碳化硅肖特基, SIC, thinQ 2G 1200V系列, 单, 1.2 kV, 10 A, 36 nC, TO-220
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