Technical parameters/forward voltage: 1.8 V
Technical parameters/dissipated power: 135 W
Technical parameters/reverse recovery time: 10 ns
Technical parameters/forward current: 10 A
Technical parameters/Maximum forward surge current (Ifsm): 58 A
Technical parameters/forward voltage (Max): 840 mV
Technical parameters/forward current (Max): 10 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/working junction temperature (Max): 175 ℃
Technical parameters/dissipated power (Max): 135000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-220-2
External dimensions/length: 10.2 mm
External dimensions/width: 4.5 mm
External dimensions/height: 9.45 mm
External dimensions/packaging: TO-220-2
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Each
Other/Manufacturing Applications: Computers & Computer Peripherals, Consumer Electronics, Communications & Networking, Motor Drive & Control
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SDT12S60
|
Infineon | 类似代替 | TO-220-2 |
碳化硅肖特基二极管 Silicon Carbide Schottky Diode
|
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