Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/Continuous drain current (Ids): 6A
Technical parameters/dissipated power (Max): 60W (Tc)
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK1859
|
HITACHI | 功能相似 | TO-3 |
Silicon N Channel MOS FET
|
||
2SK1859
|
Renesas Electronics | 功能相似 | TO-3 |
Silicon N Channel MOS FET
|
||
2SK1859-E
|
Renesas Electronics | 类似代替 | TO-3-3 |
硅N沟道MOS FET Silicon N Channel MOS FET
|
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