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Model 2SK1859-E
Description Silicon N-channel MOS FET
Product QR code
Brand: Renesas Electronics
Packaging TO-3-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
51.91  yuan 51.91yuan
1+:
$ 59.6919
10+:
$ 57.0966
100+:
$ 56.6294
250+:
$ 56.2661
500+:
$ 55.6951
1000+:
$ 55.4356
2500+:
$ 55.0723
5000+:
$ 54.7608
Quantity
1+
10+
100+
250+
500+
Price
$59.6919
$57.0966
$56.6294
$56.2661
$55.6951
Price $ 59.6919 $ 57.0966 $ 56.6294 $ 56.2661 $ 55.6951
Start batch production 1+ 10+ 100+ 250+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9796) Minimum order quantity(1)
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Technical parameters/dissipated power: 60W (Tc)

Technical parameters/drain source voltage (Vds): 900 V

Technical parameters/Input capacitance (Ciss): 980pF @10V(Vds)

Technical parameters/rated power (Max): 60 W

Technical parameters/dissipated power (Max): 60W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-3-3

External dimensions/packaging: TO-3-3

Physical parameters/operating temperature: 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2SK1859 2SK1859 HITACHI 类似代替 TO-3
硅N沟道MOS FET Silicon N Channel MOS FET
PDF
2SK1859 2SK1859 Renesas Electronics 类似代替 TO-3
硅N沟道MOS FET Silicon N Channel MOS FET
PDF

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