Technical parameters/dissipated power: 625 mW
Technical parameters/minimum current amplification factor (hFE): 50
Technical parameters/Maximum current amplification factor (hFE): 150
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4125BU
|
ON Semiconductor | 功能相似 | TO-226-3 |
Trans GP BJT PNP 30V 0.2A 3Pin TO-92 Bulk
|
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2N4125TA
|
Fairchild | 功能相似 | TO-226-3 |
Trans GP BJT PNP 30V 0.2A 3Pin TO-92 Ammo
|
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2N4125TA
|
ON Semiconductor | 功能相似 | TO-92 |
Trans GP BJT PNP 30V 0.2A 3Pin TO-92 Ammo
|
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2SC458
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HITACHI | 功能相似 |
NPN硅外延 Silicon NPN Epitaxial
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2SD1207
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ON Semiconductor | 功能相似 |
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