Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: -200 mA
Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.2A
Technical parameters/minimum current amplification factor (hFE): 50 @2mA, 1V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4125
|
ON Semiconductor | 功能相似 | TO-92 |
双极晶体管 - 双极结型晶体管(BJT) . .
|
||
|
|
Central Semiconductor | 功能相似 | TO-92-3 |
双极晶体管 - 双极结型晶体管(BJT) . .
|
||
2N4125
|
Fairchild | 功能相似 | TO-92-3 |
双极晶体管 - 双极结型晶体管(BJT) . .
|
||
2N4125BU
|
ON Semiconductor | 功能相似 | TO-226-3 |
Trans GP BJT PNP 30V 0.2A 3Pin TO-92 Bulk
|
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