Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 4A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-126
External dimensions/packaging: TO-126
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4920
|
Central Semiconductor | 功能相似 | TO-126 |
Trans GP BJT PNP 80V 3A 3Pin TO-225 Bulk
|
||
2N4920
|
Micro Commercial Components | 功能相似 | SIP |
Trans GP BJT PNP 80V 3A 3Pin TO-225 Bulk
|
||
2N4920
|
Motorola | 功能相似 |
Trans GP BJT PNP 80V 3A 3Pin TO-225 Bulk
|
|||
|
|
ROHM Semiconductor | 功能相似 | SOP |
7 AMPERES NPN SILICON POWER TRANSISTORS 60W 150 and 200 VOLTS
|
||
|
|
Inchange Semiconductor | 功能相似 |
7 AMPERES NPN SILICON POWER TRANSISTORS 60W 150 and 200 VOLTS
|
|||
BU406
|
Fairchild | 功能相似 | TO-220-3 |
7 AMPERES NPN SILICON POWER TRANSISTORS 60W 150 and 200 VOLTS
|
||
BU406
|
Bourns J.W. Miller | 功能相似 | TO-220 |
7 AMPERES NPN SILICON POWER TRANSISTORS 60W 150 and 200 VOLTS
|
||
BU406
|
ON Semiconductor | 功能相似 | TO-220-3 |
7 AMPERES NPN SILICON POWER TRANSISTORS 60W 150 and 200 VOLTS
|
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