Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 20A
Technical parameters/rise time: 212 ns
Technical parameters/Input capacitance (Ciss): 880pF @25V(Vds)
Technical parameters/descent time: 84 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 74000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: DPAK-252
External dimensions/packaging: DPAK-252
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Rail
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ON Semiconductor | 类似代替 | DPAK |
DPAK N-CH 30V 20A
|
||
MTD20N03HDLT4
|
ON Semiconductor | 完全替代 | DPAK-252 |
DPAK N-CH 30V 20A
|
||
MTD20N03HDLT4
|
Motorola | 完全替代 | TO-252 |
DPAK N-CH 30V 20A
|
||
NTD20N03L27-1G
|
ON Semiconductor | 功能相似 | TO-251-3 |
20A,30V,N沟道MOSFET
|
||
NTD20N03L27G
|
ON Semiconductor | 功能相似 | TO-252-3 |
功率MOSFET Power MOSFET
|
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