Technical parameters/rated voltage (DC): | 30.0 V |
|
Technical parameters/rated current: | 20.0 A |
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Technical parameters/drain source resistance: | 27.0 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 1.75W (Ta), 74W (Tc) |
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Technical parameters/Input capacitance: | 1.26 nF |
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Technical parameters/gate charge: | 18.9 nC |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Leakage source breakdown voltage: | 30.0 V |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | 20.0 A |
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Technical parameters/rise time: | 137 ns |
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Technical parameters/Input capacitance (Ciss): | 1260pF @25V(Vds) |
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Technical parameters/rated power (Max): | 1.75 W |
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Technical parameters/descent time: | 31 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1.75W (Ta), 74W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-251-3 |
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Dimensions/Packaging: | TO-251-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTD20N03L27
|
ON Semiconductor | 完全替代 | TO-252-3 |
20A,30V逻辑电平的功率MOSFET
|
||
NTD20N03L27G
|
ON Semiconductor | 完全替代 | TO-252-3 |
功率MOSFET Power MOSFET
|
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