Technical parameters/dissipated power: 500 mW
Technical parameters/leakage source breakdown voltage: 10 V
Technical parameters/breakdown voltage of gate source: 25 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-78-3
External dimensions/packaging: TO-78-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
U430
|
Vishay Siliconix | 完全替代 | TO-78-6 |
JFET P-CH 25V TO-78
|
||
U430
|
InterFET | 完全替代 | TO-78-3 |
JFET P-CH 25V TO-78
|
||
U430
|
AVX | 完全替代 |
JFET P-CH 25V TO-78
|
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