Technical parameters/rated current: 10.0 mA
Technical parameters/breakdown voltage: -25.0 V|25 V
Technical parameters/drain source resistance: 2.00 kΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 500 mW
Technical parameters/breakdown voltage of gate source: -25.0 V
Technical parameters/Continuous drain current (Ids): 30.0 mA
Technical parameters/Input capacitance (Ciss): 5pF @10V(Vds)
Technical parameters/rated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 7
Encapsulation parameters/Encapsulation: TO-78-6
External dimensions/packaging: TO-78-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
U430
|
Vishay Siliconix | 完全替代 | TO-78-6 |
JFET P-CH 25V TO-78
|
||
U430
|
InterFET | 完全替代 | TO-78-3 |
JFET P-CH 25V TO-78
|
||
U430
|
AVX | 完全替代 |
JFET P-CH 25V TO-78
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review