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Model RFD10P03L
Description 10A ， 30V ， 0.200W ，Logic Level P-channel Power MOSFET 10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET
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Brand: Fairchild
Packaging TO-251-3
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5394) Minimum order quantity(1)
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Technical parameters/polarity: P-CH

Technical parameters/dissipated power: 65 W

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 10A

Technical parameters/rise time: 50 ns

Technical parameters/descent time: 20 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-251-3

External dimensions/length: 6.8 mm

External dimensions/width: 2.5 mm

External dimensions/height: 6.3 mm

External dimensions/packaging: TO-251-3

Other/Product Lifecycle: Unknown

Compliant with standards/RoHS standards: Non-Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
RFD10P03L RFD10P03L Fairchild 功能相似 TO-251-3
10A ， 30V ， 0.200欧姆，逻辑电平，P沟道功率MOSFET 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET
PDF
RFD10P03LSM RFD10P03LSM Fairchild 功能相似 DPAK
MOSFET P-CH 30V 10A TO-252AA
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RFD10P03LSM RFD10P03LSM ON Semiconductor 功能相似 TO-252
MOSFET P-CH 30V 10A TO-252AA

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