Technical parameters/rise time: | 50 ns |
|
Technical parameters/Input capacitance (Ciss): | 1035pF @25V(Vds) |
|
Technical parameters/descent time: | 20 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 65000 mW |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252 |
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Dimensions/Packaging: | TO-252 |
|
Physical parameters/materials: | Silicon |
|
Compliant with standards/RoHS standards: |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RFD10P03L
|
Fairchild | 功能相似 | TO-251-3 |
10A , 30V , 0.200W ,逻辑电平P沟道功率MOSFET 10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET
|
||
RFD10P03LSM
|
Fairchild | 功能相似 | DPAK |
10A , 30V , 0.200欧姆,逻辑电平,P沟道功率MOSFET 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET
|
||
|
|
ON Semiconductor | 功能相似 | TO-252 |
10A , 30V , 0.200欧姆,逻辑电平,P沟道功率MOSFET 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET
|
||
|
|
Harris | 类似代替 |
DPAK P-CH 30V 10A
|
|||
|
|
Fairchild | 类似代替 | DPAK |
DPAK P-CH 30V 10A
|
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