Technical parameters/drain source resistance: 36.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.00 W
Technical parameters/breakdown voltage of gate source: ±12.0 V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TSSOP
External dimensions/packaging: TSSOP
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTGS3136PT1G
|
ON Semiconductor | 功能相似 | SOT-23-6 |
P 通道功率 MOSFET,20V,ON Semiconductor ### MOSFET 晶体管,ON Semiconductor
|
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